auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.68 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.49 EUR |
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Technische Details SH8K39GZETB ROHM Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 200µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K39GZETB nach Preis ab 1.4 EUR bis 4.88 EUR
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SH8K39GZETB | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 8A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
auf Bestellung 2424 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8K39GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SH8K39GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
auf Bestellung 637 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K39GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
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