SH8K39GZETB ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET 4V Drive Nch+Nch MOSFET. SH8K39 is a power MOSFET with low-on resistance and High power package (SOP8), suitable for switching and motor drive.
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 2.83 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.08 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.61 EUR |
| 2500+ | 1.51 EUR |
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Technische Details SH8K39GZETB ROHM Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 200µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K39GZETB nach Preis ab 1.5 EUR bis 3.47 EUR
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SH8K39GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
auf Bestellung 3945 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8K39GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SH8K39GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 60V 13A 8-Pin SOP T/R |
auf Bestellung 637 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K39GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 13A; Idm: 30A; 5.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 30A Power dissipation: 5.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2500 Stücke |
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SH8K39GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |
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SH8K39GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 13A; Idm: 30A; 5.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 30A Power dissipation: 5.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |