auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 161+ | 0.91 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.73 EUR |
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Technische Details SH8KA4TB1 Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8KA4TB1 nach Preis ab 0.63 EUR bis 2.09 EUR
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SH8KA4TB1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 30V 9A 8-Pin SOP T/R |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8KA4TB1 | Hersteller : ROHM Semiconductor |
MOSFETs 30V Nch+Nch Power MOSFET |
auf Bestellung 4142 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KA4TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET2 N-CH SOP8G Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KA4TB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 30V 9A 8-Pin SOP T/R |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8KA4TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET2 N-CH SOP8G Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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