SH8M24TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.61 EUR |
| 5000+ | 1.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SH8M24TB1 Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 45V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.
Weitere Produktangebote SH8M24TB1 nach Preis ab 1.56 EUR bis 3.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SH8M24TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
auf Bestellung 6563 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SH8M24TB1 | Hersteller : ROHM Semiconductor |
MOSFET Nch+Pch 45V/-45V 4.5A/-3.5A; MOSFET |
auf Bestellung 1986 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SH8M24TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-6A; Idm: 14÷18A; 3.1W Case: SOP8 Polarisation: unipolar Power dissipation: 3.1W Kind of package: reel; tape Gate charge: 6.8/13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14...18A Mounting: SMD Drain-source voltage: 45/-45V Drain current: 6/-6A On-state resistance: 64/92mΩ Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SH8M24TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-6A; Idm: 14÷18A; 3.1W Case: SOP8 Polarisation: unipolar Power dissipation: 3.1W Kind of package: reel; tape Gate charge: 6.8/13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14...18A Mounting: SMD Drain-source voltage: 45/-45V Drain current: 6/-6A On-state resistance: 64/92mΩ Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |