SH8M4TB1 Rohm Semiconductor

Description: MOSFET N/P-CH 30V 9A/7A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9A, 7A, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).