
SI1012-TP Micro Commercial Components (MCC)
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Technische Details SI1012-TP Micro Commercial Components (MCC)
Description: MOSFET N-CH 20V 500MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 2.5V, Power Dissipation (Max): 150mW (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 750 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V.
Weitere Produktangebote SI1012-TP
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1012-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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SI1012-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 2.5V Power Dissipation (Max): 150mW (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 750 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V |
Produkt ist nicht verfügbar |
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SI1012-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 2.5V Power Dissipation (Max): 150mW (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 750 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V |
Produkt ist nicht verfügbar |