Technische Details SI1012R-T1-E3 VISHAY
Description: MOSFET N-CH 20V 500MA SC75A, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SC-75A, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1012R-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SI1012R-T1-E3 | Vishay Siliconix |
 SC-75 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SI1012R-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC75A Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-75A Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
SI1012R-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC75A Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-75A Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1012R-T1-E3 |
|
Hersteller: Vishay Siliconix
SC-75 Транзистори
SC-75 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1012R-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 500MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1012R-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 500MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH