SI1071X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details SI1071X-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Power Dissipation (Max): 236mW (Ta), Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V, Current - Continuous Drain (Id) @ 25°C: 960mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
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SI1071X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 0.96A SC89-6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 960mA (Ta) Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1071X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH