SI1413DH-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 2.3A SC70-6, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 800mV @ 100µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).