Technische Details SI1413EDH-T1-E3 VISHAY
Description: MOSFET P-CH 20V 2.3A SC70-6, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 450mV @ 100µA (Min), Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1413EDH-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI1413EDH-T1-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 2.3A SC70-6Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
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SI1413EDH-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.3A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1413EDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1413EDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 2.3A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH