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SI1443EDH-T1-BE3 Vishay Siliconix


si1443edh.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A/4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI1443EDH-T1-BE3 Vishay Siliconix

Description: MOSFET P-CH 30V 4A/4A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V, Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V.

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SI1443EDH-T1-BE3 SI1443EDH-T1-BE3 Vishay / Siliconix si1443edh.pdf MOSFETs SOT363 P-CH 30V 4A
auf Bestellung 94761 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.09 EUR
10+0.73 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.32 EUR
3000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1443EDH-T1-BE3 SI1443EDH-T1-BE3 Vishay Siliconix si1443edh.pdf Description: MOSFET P-CH 30V 4A/4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 6190 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.09 EUR
27+0.8 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.33 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1443EDH-T1-BE3 si1443edh.pdf
Hersteller: Vishay / Siliconix
MOSFETs SOT363 P-CH 30V 4A
auf Bestellung 94761 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.09 EUR
10+0.73 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.32 EUR
3000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1443EDH-T1-BE3 si1443edh.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A/4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 6190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
27+0.8 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.33 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH