| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.37 EUR |
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Technische Details SI1467DH-T1-BE3 Vishay
Description: MOSFET P-CH 20V 3A/2.7A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V.
Weitere Produktangebote SI1467DH-T1-BE3 nach Preis ab 0.5 EUR bis 1.74 EUR
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SI1467DH-T1-BE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 3A/2.7A SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
auf Bestellung 2810 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1467DH-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3A/2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Description: MOSFET P-CH 20V 3A/2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |