SI1469DH-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| 9000+ | 0.42 EUR |
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Technische Details SI1469DH-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1469DH-T1-E3 nach Preis ab 0.32 EUR bis 1.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SI1469DH-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1469DH-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1469DH-T1-E3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs SC70-6 |
auf Bestellung 4887 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1469DH-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 11118 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1469DH-T1-E3 | Vishay / Siliconix |
MOSFET -20V Vds 12V Vgs SC70-6 |
auf Bestellung 5748 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1469DH-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.49 EUR |
| SI1469DH-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 169+ | 1.05 EUR |
| 183+ | 0.93 EUR |
| 187+ | 0.88 EUR |
| 235+ | 0.67 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| SI1469DH-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs SC70-6
MOSFETs -20V Vds 12V Vgs SC70-6
auf Bestellung 4887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.43 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| SI1469DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 11118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.56 EUR |
| SI1469DH-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET -20V Vds 12V Vgs SC70-6
MOSFET -20V Vds 12V Vgs SC70-6
auf Bestellung 5748 Stücke:
Lieferzeit 10-14 Tag (e)