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SI1469DH-T1-E3

SI1469DH-T1-E3 Vishay Siliconix

si1469dh.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
6000+0.38 EUR
9000+0.35 EUR
Mindestbestellmenge: 3000
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Technische Details SI1469DH-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 20V 2.7A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V.

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SI1469DH-T1-E3 SI1469DH-T1-E3 Hersteller : Vishay Semiconductors si1469dh.pdf MOSFETs -20V Vds 12V Vgs SC70-6
auf Bestellung 4887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.2 EUR
10+0.98 EUR
100+0.65 EUR
500+0.52 EUR
1000+0.46 EUR
3000+0.39 EUR
6000+0.37 EUR
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SI1469DH-T1-E3 SI1469DH-T1-E3 Hersteller : Vishay Siliconix si1469dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 11118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
18+0.99 EUR
100+0.66 EUR
500+0.53 EUR
1000+0.47 EUR
Mindestbestellmenge: 12
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SI1469DH-T1-E3 SI1469DH-T1-E3 Hersteller : Vishay / Siliconix si1469dh-280078.pdf MOSFET -20V Vds 12V Vgs SC70-6
auf Bestellung 5748 Stücke:
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SI1469DH-T1-E3 Hersteller : VISHAY si1469dh.pdf SI1469DH-T1-E3 SMD P channel transistors
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