SI1470DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
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Technische Details SI1470DH-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363.
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SI1470DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 5.1A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1470DH-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH