SI1905BDH-T1-E3
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Technische Details SI1905BDH-T1-E3
Description: MOSFET 2P-CH 8V 0.63A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 357mW, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 630mA, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V, Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1905BDH-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1905BDH-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 0.63A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1905BDH-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.63A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |