Technische Details SI1905DL-T1-E3 VISHAY
Description: MOSFET 2P-CH 8V 0.57A SC70-6, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 570mA, Drain to Source Voltage (Vdss): 8V, Power - Max: 270mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1905DL-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI1905DL-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 8V 0.57A SC70-6Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 570mA Drain to Source Voltage (Vdss): 8V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
SI1905DL-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.57A SC70-6 Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 570mA Drain to Source Voltage (Vdss): 8V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI1905DL-T1-E3 | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1905DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1905DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 570mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1905DL-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH