Technische Details SI1905DL-T1-E3 VISHAY
Description: MOSFET 2P-CH 8V 0.57A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 270mW, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 570mA, Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1905DL-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI1905DL-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 8V 0.57A SC70-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 570mA Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI1905DL-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.57A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 570mA Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI1905DL-T1-E3 | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI1905DL-T1-E3 | Vishay |
Trans MOSFET P-CH 8V 0.57A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI1905DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1905DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1905DL-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3
MOSFETs RECOMMENDED ALT SI1965DH-T1-GE3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1905DL-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 8V 0.57A 6-Pin SC-70 T/R
Trans MOSFET P-CH 8V 0.57A 6-Pin SC-70 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH