| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.28 EUR |
| 9000+ | 0.25 EUR |
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Technische Details SI1965DH-T1-E3 Vishay / Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Drain to Source Voltage (Vdss): 12V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1965DH-T1-E3 nach Preis ab 0.39 EUR bis 1.28 EUR
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SI1965DH-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 12V 1.3A SC70-6Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 12V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 875 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1965DH-T1-E3 |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1965DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 23+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| SI1965DH-T1-E3 |
|
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH