auf Bestellung 14933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.28 EUR |
| 9000+ | 0.25 EUR |
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Technische Details SI1965DH-T1-E3 Vishay / Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.
Weitere Produktangebote SI1965DH-T1-E3 nach Preis ab 0.39 EUR bis 1.28 EUR
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SI1965DH-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2P-CH 12V 1.3A SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 875 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1965DH-T1-E3 | Hersteller : VISHAY |
SI1965DH-T1-E3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SI1965DH-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
Produkt ist nicht verfügbar |