auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
Produktrezensionen
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Technische Details SI1967DH-T1-BE3 Vishay
Description: MOSFET 2P-CH 20V 1A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), 1.25W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V, Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1967DH-T1-BE3 nach Preis ab 0.18 EUR bis 1.11 EUR
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SI1967DH-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1967DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta), 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1967DH-T1-BE3 | Hersteller : Vishay |
MOSFETs SOT363 P CHAN 20V |
auf Bestellung 75106 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1967DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta), 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 7019 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1967DH-T1-BE3 | Hersteller : VISHAY |
Description: VISHAY - SI1967DH-T1-BE3 - MOSFET, P-CH, 20V, 1.3A, SC-70 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 6Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 4444 Stücke: Lieferzeit 14-21 Tag (e) |