SI2101A-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
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Technische Details SI2101A-TP Micro Commercial Components (MCC)
Description: P-CHANNEL MOSFET, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 450mW, Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote SI2101A-TP nach Preis ab 0.18 EUR bis 0.7 EUR
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SI2101A-TP | MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFETTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A FET Type: P-Channel |
auf Bestellung 1627 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2101A-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
FET Type: P-Channel
Description: P-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
FET Type: P-Channel
auf Bestellung 1627 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |