SI2101AHE3-TP Micro Commercial Components


si2101ahe3sot-323.pdf Hersteller: Micro Commercial Components
P-Channel MOSFET
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Technische Details SI2101AHE3-TP Micro Commercial Components

Description: Interface, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 300mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

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SI2101AHE3-TP Hersteller : Micro Commercial Components SI2101AHE3(SOT-323).pdf SI2101AHE3-TP
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SI2101AHE3-TP SI2101AHE3-TP Hersteller : Micro Commercial Co SI2101AHE3(SOT-323).pdf Description: Interface
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 300mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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SI2101AHE3-TP SI2101AHE3-TP Hersteller : Micro Commercial Components (MCC) SI2101AHE3_SOT_323_-3200342.pdf MOSFET
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