SI2301AHE3-TP Micro Commercial Components
Hersteller: Micro Commercial Components
Trans MOSFET P-CH 20V 3.4A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Technische Details SI2301AHE3-TP Micro Commercial Components
Description: Interface, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Power Dissipation (Max): 1W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V, Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SI2301AHE3-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI2301AHE3-TP | MCC (Micro Commercial Components) |
Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Power Dissipation (Max): 1W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI2301AHE3-TP | Micro Commercial Components (MCC) |
MOSFETs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI2301AHE3-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V
Grade: Automotive
Qualification: AEC-Q101
Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.4A, 4.5V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2301AHE3-TP |
|
Hersteller: Micro Commercial Components (MCC)
MOSFETs
MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH