auf Bestellung 29901 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 391+ | 0.49 EUR |
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Technische Details SI2301BDS-T1-E3 Vishay
Description: MOSFET P-CH 20V 2.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V.
Weitere Produktangebote SI2301BDS-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SI2301BDST1E3 | Hersteller : VISHAY |
auf Bestellung 5650 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI2301BDST1E3 | Hersteller : VISHAY | 09+ SOP |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2301BDS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2301BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SI23 |
Produkt ist nicht verfügbar |
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| SI2301BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.4A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -10A |
Produkt ist nicht verfügbar |