SI2302A-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
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Technische Details SI2302A-TP MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 1.2V @ 50µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V.
Weitere Produktangebote SI2302A-TP nach Preis ab 0.16 EUR bis 0.9 EUR
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SI2302A-TP | MICRO COMMERCIAL COMPONENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6058 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2302A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V |
auf Bestellung 12071 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: MICRO COMMERCIAL COMPONENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6058 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 177+ | 0.41 EUR |
| 281+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.16 EUR |
| SI2302A-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
auf Bestellung 12071 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |