SI2304BDS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
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Technische Details SI2304BDS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V.
Weitere Produktangebote SI2304BDS-T1-E3 nach Preis ab 0.32 EUR bis 1.44 EUR
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SI2304BDS-T1-E3 | Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Vishay Semiconductors |
MOSFETs 30V 3.2A 0.07Ohm |
auf Bestellung 127404 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2304BDS-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V |
auf Bestellung 3490 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2304BDS-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 195+ | 0.75 EUR |
| SI2304BDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 1.23 EUR |
| 194+ | 0.73 EUR |
| 285+ | 0.48 EUR |
| SI2304BDS-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 3.2A 0.07Ohm
MOSFETs 30V 3.2A 0.07Ohm
auf Bestellung 127404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.35 EUR |
| 6000+ | 0.32 EUR |
| SI2304BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 3490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |