SI2307CDS-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 3.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2307CDS-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote SI2307CDS-T1-E3 nach Preis ab 0.36 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI2307CDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs SOT-23 |
auf Bestellung 449694 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI2307CDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 3.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
auf Bestellung 15670 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SI2307CDS-T1-E3 |
|
auf Bestellung 2080 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
 |
SI2307CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
SI2307CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
SI2307CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |