SI2310AHE3-TP

SI2310AHE3-TP Micro Commercial Components


si2310ahe3sot-23.pdf Hersteller: Micro Commercial Components
N-Channel Enhancement Mode Field Effect Transistor Automotive AEC-Q101
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Technische Details SI2310AHE3-TP Micro Commercial Components

Description: Interface, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

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SI2310AHE3-TP Hersteller : Micro Commercial Components si2310ahe3sot-23.pdf SI2310AHE3-TP
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SI2310AHE3-TP SI2310AHE3-TP Hersteller : Micro Commercial Co SI2310AHE3(SOT-23).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SI2310AHE3-TP Hersteller : Micro Commercial Components (MCC) SI2310AHE3_SOT_23_-3135216.pdf MOSFET N-CHANNEL MOSFET
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