SI2310AHE3-TP Micro Commercial Components (MCC)


SI2310AHE3_SOT_23_-3135216.pdf
Hersteller: Micro Commercial Components (MCC)
MOSFETs N-CHANNEL MOSFET
auf Bestellung 216 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.67 EUR
10+0.49 EUR
100+0.28 EUR
500+0.19 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SI2310AHE3-TP Micro Commercial Components (MCC)

Description: Interface, Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.2W, Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote SI2310AHE3-TP

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SI2310AHE3-TP SI2310AHE3-TP MCC (Micro Commercial Components) SI2310AHE3(SOT-23).pdf Description: Interface
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI2310AHE3-TP SI2310AHE3(SOT-23).pdf
Hersteller: MCC (Micro Commercial Components)
Description: Interface
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH