SI2310AHE3-TP Micro Commercial Components (MCC)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
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Technische Details SI2310AHE3-TP Micro Commercial Components (MCC)
Description: Interface, Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.2W, Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SI2310AHE3-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2310AHE3-TP | MCC (Micro Commercial Components) |
Description: InterfaceInput Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.2W Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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| SI2310AHE3-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: Interface
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Description: Interface
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


