SI2310K-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
auf Bestellung 29980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 46+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details SI2310K-TP MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V, Power Dissipation (Max): 1.3W (Tj), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V.
Weitere Produktangebote SI2310K-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI2310K-TP | Hersteller : Micro Commercial Components |
SI2310K-TP |
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| SI2310K-TP | Hersteller : Micro Commercial Components |
SI2310K-TP |
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SI2310K-TP | Hersteller : MCC (Micro Commercial Components) |
Description: SMALL SIGNAL MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V Power Dissipation (Max): 1.3W (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI2310K-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET,SOT-23 |
Produkt ist nicht verfügbar |