SI2312A UMW
Hersteller: UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 105+ | 0.2 EUR |
| 119+ | 0.18 EUR |
| 140+ | 0.15 EUR |
| 250+ | 0.14 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
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Technische Details SI2312A UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote SI2312A nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| SI2312A | GOODWORK |
Description: 20V 7A 12m@4.5V SOT-23-3L |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2312A |
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Hersteller: GOODWORK
Description: 20V 7A 12m@4.5V SOT-23-3L
Description: 20V 7A 12m@4.5V SOT-23-3L
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |

