| Anzahl | Preis |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.48 EUR |
| 3000+ | 0.41 EUR |
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Technische Details SI2316BDS-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2316BDS-T1-BE3 nach Preis ab 0.44 EUR bis 1.04 EUR
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SI2316BDS-T1-BE3 | Vishay Siliconix |
 Description: N-CHANNEL 30-V (D-S) MOSFETInput Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2955 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2316BDS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 20+ | 0.92 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.44 EUR |