| Anzahl | Preis |
|---|---|
| 3+ | 0.99 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.25 EUR |
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Technische Details SI2318DS-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2318DS-T1-BE3 nach Preis ab 0.48 EUR bis 1.2 EUR
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SI2318DS-T1-BE3 | Vishay Siliconix |
 Description: N-CHANNEL 40-V (D-S) MOSFETDrain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2318DS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CHANNEL 40-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.2 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.48 EUR |