SI2318HDS-T1-GE3 Vishay Semiconductors

Description: N-CHANNEL 40-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).