| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.15 EUR |
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Technische Details SI2319-TP Micro Commercial Components (MCC)
Description: MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W, Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Supplier Device Package: SOT-23, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2319-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
|---|---|---|---|---|---|
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SI2319-TP | MCC (Micro Commercial Components) |
 Description: MOSFETInput Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOT-23 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI2319-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH