SI2324-TP Micro Commercial Co

Description: MOSFET N-CH ENH FET 100VDS 2A 8A, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 1.2W, Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.