SI2324A-TP
Produktcode: 173380
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Hersteller:
Gehäuse: SOT-23
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Weitere Produktangebote SI2324A-TP nach Preis ab 0.12 EUR bis 0.64 EUR
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SI2324A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 100V 2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2324A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 100V 2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
auf Bestellung 14183 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2324A-TP | Micro Commercial Components (MCC) |
MOSFETs N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF |
auf Bestellung 4425 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
| SI2324A-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 14183 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| SI2324A-TP |
|
Hersteller: Micro Commercial Components (MCC)
MOSFETs N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF
MOSFETs N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF
auf Bestellung 4425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |