SI2331DS-T1-E3 VISHAY

Description: MOSFET P-CH 12V 3.2A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 710mW (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3.6A, 4.5V, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta).