| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.093 EUR |
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Technische Details SI2365EDS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2365EDS-T1-BE3 nach Preis ab 0.18 EUR bis 0.7 EUR
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SI2365EDS-T1-BE3 | Vishay Siliconix |
 Description: P-CHANNEL 20-V (D-S) MOSFETGate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2579 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2365EDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: P-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2579 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |