auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details SI2365EDS-T1-BE3 Vishay
Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V.
Weitere Produktangebote SI2365EDS-T1-BE3 nach Preis ab 0.097 EUR bis 0.7 EUR
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SI2365EDS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2365EDS-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT23 P-CH 20V 4.5A |
auf Bestellung 57512 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2365EDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
auf Bestellung 2579 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2365EDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
Produkt ist nicht verfügbar |
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| SI2365EDS-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.5A; Idm: -20A Technology: TrenchFET® Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -4.5A Gate charge: 36nC On-state resistance: 67.5mΩ Power dissipation: 1.7W Gate-source voltage: ±8V Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |