| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details SI2365EDS-T1-BE3 Vishay
Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V.
Weitere Produktangebote SI2365EDS-T1-BE3 nach Preis ab 0.11 EUR bis 0.83 EUR
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SI2365EDS-T1-BE3 | Vishay |
 Trans MOSFET P-CH 20V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2365EDS-T1-BE3 | Vishay / Siliconix |
MOSFETs SOT23 P-CH 20V 4.5A |
auf Bestellung 57275 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2365EDS-T1-BE3 | Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
auf Bestellung 2579 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2365EDS-T1-BE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 5.9A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 5.9A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| SI2365EDS-T1-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SOT23 P-CH 20V 4.5A
MOSFETs SOT23 P-CH 20V 4.5A
auf Bestellung 57275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.11 EUR |
| SI2365EDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
auf Bestellung 2579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |