auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.075 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2371EDS-T1-BE3 Vishay
Description: P-CHANNEL 30-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V.
Weitere Produktangebote SI2371EDS-T1-BE3 nach Preis ab 0.075 EUR bis 0.72 EUR
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SI2371EDS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2371EDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2371EDS-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT23 P-CH 30V 3.7A |
auf Bestellung 127540 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2371EDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) |
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