SI2392ADS-T1-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
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Technische Details SI2392ADS-T1-BE3 Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V.
Weitere Produktangebote SI2392ADS-T1-BE3 nach Preis ab 0.31 EUR bis 1.55 EUR
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SI2392ADS-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
auf Bestellung 4818 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2392ADS-T1-BE3 | Vishay / Siliconix |
MOSFETs SOT233 100V 3.1A N-CH MOSFET |
auf Bestellung 14235 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2392ADS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Description: N-CHANNEL 100-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
auf Bestellung 4818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| SI2392ADS-T1-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SOT233 100V 3.1A N-CH MOSFET
MOSFETs SOT233 100V 3.1A N-CH MOSFET
auf Bestellung 14235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.55 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |