Technische Details SI2392DS-T1-GE3 Vishay Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Case: SOT23, Technology: TrenchFET®, Gate charge: 10.4nC, On-state resistance: 189mΩ, Power dissipation: 2.5W, Drain current: 3.1A, Pulsed drain current: 8A, Gate-source voltage: ±20V, Drain-source voltage: 100V, Polarisation: unipolar, Kind of package: reel; tape.
Weitere Produktangebote SI2392DS-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI2392DS-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 3.1A SOT-23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI2392DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 Technology: TrenchFET® Gate charge: 10.4nC On-state resistance: 189mΩ Power dissipation: 2.5W Drain current: 3.1A Pulsed drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI2392DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT-23
Description: MOSFET N-CH 100V 3.1A SOT-23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2392DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Technology: TrenchFET®
Gate charge: 10.4nC
On-state resistance: 189mΩ
Power dissipation: 2.5W
Drain current: 3.1A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Technology: TrenchFET®
Gate charge: 10.4nC
On-state resistance: 189mΩ
Power dissipation: 2.5W
Drain current: 3.1A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH