SI2392DS-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A
Case: SOT23
Drain-source voltage: 100V
Drain current: 3.1A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.4nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 8A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
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Technische Details SI2392DS-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A, Case: SOT23, Drain-source voltage: 100V, Drain current: 3.1A, On-state resistance: 189mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.5W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 10.4nC, Technology: TrenchFET®, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 8A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI2392DS-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SI2392DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT-23 |
Produkt ist nicht verfügbar |
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SI2392DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT-23 |
Produkt ist nicht verfügbar |
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| SI2392DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.1A; Idm: 8A Case: SOT23 Drain-source voltage: 100V Drain current: 3.1A On-state resistance: 189mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 8A Mounting: SMD |
Produkt ist nicht verfügbar |