
SI3134KL3A-TP MCC (Micro Commercial Components)

Description: N-CHANNEL MOSFET DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
auf Bestellung 5054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
57+ | 0.31 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.13 EUR |
2000+ | 0.11 EUR |
5000+ | 0.10 EUR |
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Technische Details SI3134KL3A-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA, Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Power Dissipation (Max): 900mW, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V.
Weitere Produktangebote SI3134KL3A-TP
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI3134KL3A-TP | Hersteller : Micro Commercial Components |
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SI3134KL3A-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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SI3134KL3A-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V |
Produkt ist nicht verfügbar |