SI3136K-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 550mA, 4.5V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 610 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
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Technische Details SI3136K-TP Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 550mA, 4.5V, Power Dissipation (Max): 960mW (Tj), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 610 pC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V.
Weitere Produktangebote SI3136K-TP nach Preis ab 0.2 EUR bis 0.86 EUR
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SI3136K-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET,SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 550mA, 4.5V Power Dissipation (Max): 960mW (Tj) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 610 pC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3136K-TP |
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Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 550mA, 4.5V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 610 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 550mA, 4.5V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 610 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 41+ | 0.51 EUR |
| 50+ | 0.42 EUR |
| 100+ | 0.31 EUR |
| 250+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |