SI3139KEA-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.071 EUR |
| 6000+ | 0.064 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3139KEA-TP MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA, Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V, Power Dissipation (Max): 150mW, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V.
Weitere Produktangebote SI3139KEA-TP nach Preis ab 0.088 EUR bis 0.42 EUR
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SI3139KEA-TP | MCC (Micro Commercial Components) |
Description: P-CHANNEL MOSFET,SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Power Dissipation (Max): 150mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V |
auf Bestellung 7364 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3139KEA-TP |
|
Hersteller: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Description: P-CHANNEL MOSFET,SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 150mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 7364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 82+ | 0.25 EUR |
| 185+ | 0.11 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |