SI3415CHE3-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: P-CHANNEL MOSFET, SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details SI3415CHE3-TP Micro Commercial Co
Description: P-CHANNEL MOSFET, SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V, Power Dissipation (Max): 1W, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SI3415CHE3-TP nach Preis ab 0.074 EUR bis 0.69 EUR
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SI3415CHE3-TP | Hersteller : Micro Commercial Components |
Trans MOSFET P-CH 20V 3.9A Automotive 3-Pin SOT-23 T/R |
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SI3415CHE3-TP | Hersteller : Micro Commercial Components (MCC) |
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SI3415CHE3-TP | Hersteller : Micro Commercial Co |
Description: P-CHANNEL MOSFET, SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Power Dissipation (Max): 1W Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 5885 Stücke: Lieferzeit 10-14 Tag (e) |
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