SI3433CDV-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.3 EUR |
| 15000+ | 0.29 EUR |
| 21000+ | 0.27 EUR |
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Technische Details SI3433CDV-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Weitere Produktangebote SI3433CDV-T1-GE3 nach Preis ab 0.27 EUR bis 6.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3433CDV-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs TSOP-6 |
auf Bestellung 4998 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3433CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 22664 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3433CDV-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP SI3433CDV-T1-E3; SI3433CDV-T1-GE3; SI3433CDV-T1-BE3; SI3433CDV-T1-E3 VISHAY TSI3433cdvAnzahl je Verpackung: 50 Stücke |
auf Bestellung 580 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI3433CDV-T1-GE3 | Vishay Siliconix |
MOSFET P-CH 20V 6A 6TSOP Транзистори |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3433CDV-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs TSOP-6
MOSFETs -20V Vds 8V Vgs TSOP-6
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.3 EUR |
| 9000+ | 0.27 EUR |
| SI3433CDV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 22664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.46 EUR |
| 24+ | 0.9 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| SI3433CDV-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP SI3433CDV-T1-E3; SI3433CDV-T1-GE3; SI3433CDV-T1-BE3; SI3433CDV-T1-E3 VISHAY TSI3433cdv
Anzahl je Verpackung: 50 Stücke
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP SI3433CDV-T1-E3; SI3433CDV-T1-GE3; SI3433CDV-T1-BE3; SI3433CDV-T1-E3 VISHAY TSI3433cdv
Anzahl je Verpackung: 50 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.5 EUR |
| SI3433CDV-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
MOSFET P-CH 20V 6A 6TSOP Транзистори
MOSFET P-CH 20V 6A 6TSOP Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.05 EUR |


