SI3440DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.97 EUR |
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Technische Details SI3440DV-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.14W (Ta), Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI3440DV-T1-E3 nach Preis ab 0.86 EUR bis 3.47 EUR
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SI3440DV-T1-E3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs TSOP-6 |
auf Bestellung 61598 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3440DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 5042 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3440DV-T1-E3 |
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auf Bestellung 51 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3440DV-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs TSOP-6
MOSFETs 150V Vds 20V Vgs TSOP-6
auf Bestellung 61598 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.87 EUR |
| 3000+ | 0.86 EUR |
| SI3440DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 1.2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5042 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.47 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
| SI3440DV-T1-E3 |
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auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH