SI3442DV ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - SI3442DV - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details SI3442DV ONSEMI
Description: MOSFET N-CH 20V 4.1A SUPERSOT6, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): 8V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.
Weitere Produktangebote SI3442DV nach Preis ab 0.38 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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SI3442DV | Fairchild Semiconductor |
Description: MOSFET N-CH 20V 4.1A SUPERSOT6 Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 8V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
auf Bestellung 32796 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
| SI3442DV | VISHAY |
09+ |
auf Bestellung 41968 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3442DV |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 20V 4.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: MOSFET N-CH 20V 4.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
auf Bestellung 32796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1397+ | 0.38 EUR |
| SI3442DV |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 41968 Stücke:
Lieferzeit 21-28 Tag (e)