Technische Details SI3443DVTR IR
Description: MOSFET P-CH 20V 4.4A 6-TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V.
Weitere Produktangebote SI3443DVTR
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SI3443DVTR | Hersteller : Infineon Technologies |
 Description: MOSFET P-CH 20V 4.4A 6-TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Micro6™(TSOP-6) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V |
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