| Anzahl | Privatkunde |
|---|---|
| 285+ | 0.62 EUR |
| 288+ | 0.61 EUR |
| 301+ | 0.57 EUR |
| 320+ | 0.52 EUR |
| 323+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.45 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
285 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3459BDV-T1-E3 Vishay
Description: MOSFET P-CH 60V 2.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V, Power Dissipation (Max): 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.
Weitere Produktangebote SI3459BDV-T1-E3 nach Preis ab 0.58 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3459BDV-T1-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 60V 2.9A 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-E3 | Vishay / Siliconix |
MOSFETs -60V Vds 20V Vgs TSOP-6 |
auf Bestellung 51948 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R |
auf Bestellung 2395 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3459BDV-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 5833 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3459BDV-T1-E3 | Siliconix |
Transistor P-Channel MOSFET; 60V; 20V; 288mOhm; 2,9A; 3,3W; -55°C ~ 150°C; SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 TSI3459bdv Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI3459BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.62 EUR |
| SI3459BDV-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFETs -60V Vds 20V Vgs TSOP-6
MOSFETs -60V Vds 20V Vgs TSOP-6
auf Bestellung 51948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.38 EUR |
| 10+ | 0.98 EUR |
| 25+ | 0.96 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.58 EUR |
| SI3459BDV-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 83+ | 2.15 EUR |
| 132+ | 1.31 EUR |
| 200+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.61 EUR |
| SI3459BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 5833 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| SI3459BDV-T1-E3 |
|
Hersteller: Siliconix
Transistor P-Channel MOSFET; 60V; 20V; 288mOhm; 2,9A; 3,3W; -55°C ~ 150°C; SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 TSI3459bdv
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 60V; 20V; 288mOhm; 2,9A; 3,3W; -55°C ~ 150°C; SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 TSI3459bdv
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.06 EUR |