auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 307+ | 0.48 EUR |
| 310+ | 0.46 EUR |
| 341+ | 0.40 EUR |
| 345+ | 0.38 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3459BDV-T1-E3 Vishay
Description: MOSFET P-CH 60V 2.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V, Power Dissipation (Max): 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.
Weitere Produktangebote SI3459BDV-T1-E3 nach Preis ab 0.31 EUR bis 2.04 EUR
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SI3459BDV-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3459BDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFETs -60V Vds 20V Vgs TSOP-6 |
auf Bestellung 54962 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 5833 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3459BDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3459BDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 2.9A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3459BDV-T1-E3 | Hersteller : VISHAY |
SI3459BDV-T1-E3 SMD P channel transistors |
Produkt ist nicht verfügbar |