SI3460BDV-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 20-V (D-S) MOSFET, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.