auf Bestellung 8247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.53 EUR |
| 6000+ | 0.52 EUR |
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Technische Details SI3460BDV-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 20V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V.
Weitere Produktangebote SI3460BDV-T1-E3 nach Preis ab 0.62 EUR bis 2.11 EUR
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SI3460BDV-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 8A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V |
auf Bestellung 2904 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3460BDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3460BDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V |
Produkt ist nicht verfügbar |