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Technische Details SI3460DDV-T1-BE3 Vishay
Description: N-CHANNEL 20-V (D-S) MOSFET, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V.
Weitere Produktangebote SI3460DDV-T1-BE3 nach Preis ab 0.17 EUR bis 1.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3460DDV-T1-BE3 | Vishay |
 N-Channel MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay / Siliconix |
MOSFETs TSOP6 N-CH 20V 6.2A |
auf Bestellung 79722 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 5563 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3460DDV-T1-BE3 |
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Hersteller: Vishay
N-Channel MOSFET
N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Description: N-CHANNEL 20-V (D-S) MOSFET
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TSOP6 N-CH 20V 6.2A
MOSFETs TSOP6 N-CH 20V 6.2A
auf Bestellung 79722 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.24 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 27+ | 0.81 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |