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Technische Details SI3460DDV-T1-BE3 Vishay
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1V, Verlustleistung: 2.7W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.028ohm.
Weitere Produktangebote SI3460DDV-T1-BE3 nach Preis ab 0.17 EUR bis 1.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3460DDV-T1-BE3 | Vishay |
 N-Channel MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay / Siliconix |
MOSFETs TSOP6 N-CH 20V 6.2A |
auf Bestellung 79469 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 8563 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DDV-T1-BE3 | VISHAY |
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 2.7W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.028ohm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3460DDV-T1-BE3 | VISHAY |
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3460DDV-T1-BE3 |
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Hersteller: Vishay
N-Channel MOSFET
N-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| SI3460DDV-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Description: N-CHANNEL 20-V (D-S) MOSFET
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| SI3460DDV-T1-BE3 |
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Hersteller: Vishay / Siliconix
MOSFETs TSOP6 N-CH 20V 6.2A
MOSFETs TSOP6 N-CH 20V 6.2A
auf Bestellung 79469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.25 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 8563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 27+ | 0.8 EUR |
| 50+ | 0.58 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 2.7W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.028ohm
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 2.7W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.028ohm
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 159+ | 1.57 EUR |
| 258+ | 0.9 EUR |
| 402+ | 0.54 EUR |
| 532+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| SI3460DDV-T1-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI3460DDV-T1-BE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.028 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 159+ | 1.57 EUR |
| 258+ | 0.9 EUR |
| 402+ | 0.54 EUR |
| 532+ | 0.4 EUR |
| 1000+ | 0.36 EUR |